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Xitronix provides the most advanced technology in the world for the rapid and non-destructive characterization and process control of critical electronic properties for leading edge process technologies such as strained silicon, dopant activation and gate channel mobility.
Xitronix' proprietary Micro-Strain metrology technique provides precision in-line process control capability for strain in selective epi SiGe structures and strained SOI.
Xitronix' proprietary Micro-USJ metrology technique provides precision process control capability for dopant activation, including specialized spike anneals, laser anneals, and epitaxial growth of B-doped SiGe.
Xitronix' technology provides unparalleled measurement performance for the determination of channel mobility in advanced gate technologies.
Xitronix' Photo-Reflectance systems enable your nanomanufacturing process.
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