The drive to advanced design rules requires thinner junctions that contain higher active dopant concentrations. New materials, along with the need to limit dopant diffusion, place stringent requirements on thermal management resulting in the widespread adoption of millisecond anneal (MSA) technologies. The combination of new, more precise active dopant control requirements and the increased non-uniformity induced by MSA processes have created the need to transition from measuring “as-implanted” dopant dose to the actual activated dopant concentration post-anneal. Xitronix PMR technology provides the ability to measure both n-type and p-type active dopant species throughout the full range of concentrations. For the first time, process control of the electrical properties of the silicon at the transistor level can be achieved in an accurate, rapid and non-destructive manner.
2010 Journal of Vacuum Science and Technology Paper
2007 Frontiers Paper
US Patent Pending 2010/0315646 A1
US Patent 7,391,507
US Patent 7,239,392
US Patent 6,963,402
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